Korean Research Team Reveals Mechanism Behind Neutron Irradiation-Induced Reliability Degradation in Ferroelectric AI Semiconductors
Jeonbuk National University announced on the 20th that a research team led by Professor Bae Hak-yeol from the Department of Electronic Engineering at its College of Engineering, in collaboration with Professor Kim Tae-wan's team at Seoul National University and Q-Beam Solution, a startup affiliated with the Korea Atomic Energy Research Institute, conducted a joint study analyzing the causes of performance degradation in next-generation ferroelectric memory and neuromorphic semiconductor devices under neutron irradiation. The findings have been published in the latest issue of ACS Applied Electronic Materials. Ferroelectric semiconductors, which can maintain their polarization state even after power is disconnected, are considered a key candidate for next-generation non-volatile memory and neuromorphic computing devices. Neuromorphic computing aims to simultaneously implement both memory and computation within a single device...
2026-08-20
