Korean Research Team First to Quantitatively Reveal Radiation Degradation Mechanisms in Gallium Arsenide Semiconductors
A semiconductor research team in Korea has recently succeeded, for the first time in the country, in quantitatively identifying the performance degradation mechanisms of gallium arsenide (GaAs) compound semiconductors under radiation environments. Gallium arsenide is regarded as a key material for next-generation aerospace, aviation, and defense systems, and the findings contribute to understanding the impact of high-energy radiation on the reliability of compound semiconductor devices. The research was led by Professor Kim Min-soo and Professor Hwang Hyun-jun from the Department of Semiconductor Engineering, in collaboration with the Advanced Radiation Research Center at the Korea Atomic Energy Research Institute and WaveTrack Corporation. The research team noted that communication and power equipment aboard low-Earth-orbit satellites or detectors, when exposed to high-energy radiation environments over extended periods, may experience...
2026-08-11
