Singapore team develops deuterated silicon nitride waveguides for wafer-scale broadband light generation
A research team from the Singapore University of Technology and Design and the Institute of Microelectronics at the Agency for Science, Technology and Research (A*STAR) in Singapore has recently developed a low-loss deuterated silicon nitride waveguide capable of on-chip broadband light generation. By replacing hydrogen with its heavier isotope deuterium, the team fabricated silicon nitride waveguides at low temperatures, demonstrating potential for integration with CMOS-compatible semiconductor processes and wafer-scale mass production. The related paper, "Octave-spanning supercontinuum generation in wafer-scale low-loss deuterated silicon nitride waveguides," was published in *Optics Letters*. The study shows that this chip-scale waveguide can broaden infrared laser pulses to cover a spectral range from visible red light to deep infrared. Traditionally, silicon nitride thin films are grown from silane gas, and residual silicon-hydrogen bonds in the material absorb light in the telecommunications band, requiring high-temperature annealing that is incompatible with integrated electronic circuits.
2026-08-26
